Vishay Siliconix SIA110DJ-T1-GE3
- SIA110DJ-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 100V 5.4A/12A PPAK
- Transistors - FETs, MOSFETs - Single
- SIA110DJ-T1-GE3 Datasheet
- PowerPAK® SC-70-6
- Jinftry-Reel®
-
Lead free / RoHS Compliant
- 23618
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SIA110DJ-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 100V 5.4A/12A PPAK |
Package Jinftry-Reel® |
Series TrenchFET® Gen IV |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SC-70-6 |
Supplier Device Package PowerPAK® SC-70-6 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.5W (Ta), 19W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta), 12A (Tc) |
Rds On (Max) @ Id, Vgs 55mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V |
Package_case PowerPAK® SC-70-6 |
SIA110DJ-T1-GE3 Guarantees
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