Vishay Siliconix SIA483ADJ-T1-GE3
- SIA483ADJ-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 30V 10.6A/12A PPAK
- Transistors - FETs, MOSFETs - Single
- SIA483ADJ-T1-GE3 Datasheet
- PowerPAK® SC-70-6
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 809
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SIA483ADJ-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 30V 10.6A/12A PPAK |
Package Tape & Reel (TR) |
Series TrenchFET® Gen IV |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SC-70-6 |
Supplier Device Package PowerPAK® SC-70-6 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.4W (Ta), 17.9W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 10.6A (Ta), 12A (Tc) |
Rds On (Max) @ Id, Vgs 20mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 15 V |
Vgs (Max) +16V, -20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case PowerPAK® SC-70-6 |
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