SIDR104AEP-T1-RE3

Vishay Siliconix SIDR104AEP-T1-RE3

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  • SIDR104AEP-T1-RE3
  • Vishay Siliconix
  • N-CHANNEL 100 V (D-S) 175C MOSFE
  • Transistors - FETs, MOSFETs - Single
  • SIDR104AEP-T1-RE3 Datasheet
  • PowerPAK® SO-8
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 15558
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SIDR104AEP-T1-RE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
N-CHANNEL 100 V (D-S) 175C MOSFE
Package
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8DC
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
6.5W (Ta), 120W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
21.1A (Ta), 90.5A (Tc)
Rds On (Max) @ Id, Vgs
6.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3250 pF @ 50 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Package_case
PowerPAK® SO-8

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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