Vishay Siliconix SIDR610DP-T1-GE3
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- SIDR610DP-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 200V 8.9A/39.6A PPAK
- Transistors - FETs, MOSFETs - Single
- SIDR610DP-T1-GE3 Datasheet
- PowerPAK® SO-8
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 5104
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number SIDR610DP-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 200V 8.9A/39.6A PPAK |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case PowerPAK® SO-8 |
| Supplier Device Package PowerPAK® SO-8DC |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 6.25W (Ta), 125W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 8.9A (Ta), 39.6A (Tc) |
| Rds On (Max) @ Id, Vgs 31.9mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1380 pF @ 100 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V |
| Package_case PowerPAK® SO-8 |
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