SIE802DF-T1-GE3

Vishay Siliconix SIE802DF-T1-GE3

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  • SIE802DF-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 30V 60A 10POLARPAK
  • Transistors - FETs, MOSFETs - Single
  • SIE802DF-T1-GE3 Datasheet
  • 10-PolarPAK® (L)
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 9759
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SIE802DF-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 30V 60A 10POLARPAK
Package
Tape & Reel (TR)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
10-PolarPAK® (L)
Supplier Device Package
10-PolarPAK® (L)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
5.2W (Ta), 125W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Rds On (Max) @ Id, Vgs
1.9mOhm @ 23.6A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7000 pF @ 15 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
10-PolarPAK® (L)

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Vishay Siliconix
Vishay Siliconix
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