Vishay Siliconix SIHB30N60E-GE3
- SIHB30N60E-GE3
- Vishay Siliconix
- MOSFET N-CH 600V 29A D2PAK
- Transistors - FETs, MOSFETs - Single
- SIHB30N60E-GE3 Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
Lead free / RoHS Compliant
- 20901
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SIHB30N60E-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 600V 29A D2PAK |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package D²PAK (TO-263) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 250W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 29A (Tc) |
Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 100 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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