Vishay Siliconix SIHD1K4N60E-GE3
- SIHD1K4N60E-GE3
- Vishay Siliconix
- MOSFET N-CH 600V 4.2A TO252AA
- Transistors - FETs, MOSFETs - Single
- SIHD1K4N60E-GE3 Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Jinftry-Reel®
-
Lead free / RoHS Compliant
- 3160
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SIHD1K4N60E-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 600V 4.2A TO252AA |
Package Jinftry-Reel® |
Series E |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package D-Pak |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 63W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc) |
Rds On (Max) @ Id, Vgs 1.45Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 172 pF @ 100 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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