Vishay Siliconix SIHH11N60E-T1-GE3
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- SIHH11N60E-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 600V 11A PPAK 8 X 8
- Transistors - FETs, MOSFETs - Single
- SIHH11N60E-T1-GE3 Datasheet
- 8-PowerTDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 2818
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number SIHH11N60E-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 600V 11A PPAK 8 X 8 |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerTDFN |
| Supplier Device Package PowerPAK® 8 x 8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 114W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 11A (Tc) |
| Rds On (Max) @ Id, Vgs 339mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1076 pF @ 100 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case 8-PowerTDFN |
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