Vishay Siliconix SIHJ10N60E-T1-GE3
- SIHJ10N60E-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 600V 10A PPAK SO-8
- Transistors - FETs, MOSFETs - Single
- SIHJ10N60E-T1-GE3 Datasheet
- PowerPAK® SO-8 Dual
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 805
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SIHJ10N60E-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 600V 10A PPAK SO-8 |
Package Tape & Reel (TR) |
Series E |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SO-8 Dual |
Supplier Device Package PowerPAK® SO-8 Dual |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 89W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 10A (Tc) |
Rds On (Max) @ Id, Vgs 360mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 784 pF @ 100 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case PowerPAK® SO-8 Dual |
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