SIHJ10N60E-T1-GE3

Vishay Siliconix SIHJ10N60E-T1-GE3

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  • SIHJ10N60E-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 600V 10A PPAK SO-8
  • Transistors - FETs, MOSFETs - Single
  • SIHJ10N60E-T1-GE3 Datasheet
  • PowerPAK® SO-8 Dual
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 805
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SIHJ10N60E-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 600V 10A PPAK SO-8
Package
Tape & Reel (TR)
Series
E
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Supplier Device Package
PowerPAK® SO-8 Dual
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
89W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Rds On (Max) @ Id, Vgs
360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
784 pF @ 100 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
PowerPAK® SO-8 Dual

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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