Vishay Siliconix SIR624DP-T1-RE3
- SIR624DP-T1-RE3
- Vishay Siliconix
- MOSFET N-CH 200V 5.7A/18.6A PPAK
- Transistors - FETs, MOSFETs - Single
- SIR624DP-T1-RE3 Datasheet
- PowerPAK® SO-8
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 18180
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SIR624DP-T1-RE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 200V 5.7A/18.6A PPAK |
Package Cut Tape (CT) |
Series ThunderFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SO-8 |
Supplier Device Package PowerPAK® SO-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 5W (Ta), 52W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta), 18.6A (Tc) |
Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 100 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V |
Package_case PowerPAK® SO-8 |
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