Vishay Siliconix SIRB40DP-T1-GE3
- SIRB40DP-T1-GE3
- Vishay Siliconix
- MOSFET 2 N-CH 40V POWERPAK SO8
- Transistors - FETs, MOSFETs - Arrays
- SIRB40DP-T1-GE3 Datasheet
- PowerPAK® SO-8 Dual
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 6352
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SIRB40DP-T1-GE3 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Vishay Siliconix |
Description MOSFET 2 N-CH 40V POWERPAK SO8 |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SO-8 Dual |
Supplier Device Package PowerPAK® SO-8 Dual |
Power - Max 46.2W |
FET Type 2 N-Channel (Dual) |
FET Feature Standard |
Drain to Source Voltage (Vdss) 40V |
Current - Continuous Drain (Id) @ 25°C 40A (Tc) |
Rds On (Max) @ Id, Vgs 3.25mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds 4290pF @ 20V |
Package_case PowerPAK® SO-8 Dual |
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