Vishay Siliconix SIS606BDN-T1-GE3
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- SIS606BDN-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 100V 9.4A/35.3A PPAK
- Transistors - FETs, MOSFETs - Single
- SIS606BDN-T1-GE3 Datasheet
- PowerPAK® 1212-8
- Bulk
-
Lead free / RoHS Compliant - 2324
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number SIS606BDN-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 100V 9.4A/35.3A PPAK |
| Package Bulk |
| Series TrenchFET® Gen IV |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case PowerPAK® 1212-8 |
| Supplier Device Package PowerPAK® 1212-8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.7W (Ta), 52W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 35.3A (Tc) |
| Rds On (Max) @ Id, Vgs 17.4mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1470 pF @ 50 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V |
| Package_case PowerPAK® 1212-8 |
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