Vishay Siliconix SISF02DN-T1-GE3
- SISF02DN-T1-GE3
- Vishay Siliconix
- MOSFET DUAL N-CH 25V 1212-8
- Transistors - FETs, MOSFETs - Arrays
- SISF02DN-T1-GE3 Datasheet
- PowerPAK® 1212-8SCD
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 2500
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SISF02DN-T1-GE3 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Vishay Siliconix |
Description MOSFET DUAL N-CH 25V 1212-8 |
Package Cut Tape (CT) |
Series TrenchFET® Gen IV |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® 1212-8SCD |
Supplier Device Package PowerPAK® 1212-8SCD |
Power - Max 5.2W (Ta), 69.4W (Tc) |
FET Type 2 N-Channel (Dual) Common Drain |
FET Feature Standard |
Drain to Source Voltage (Vdss) 25V |
Current - Continuous Drain (Id) @ 25°C 30.5A (Ta), 60A (Tc) |
Rds On (Max) @ Id, Vgs 3.5mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 10V |
Package_case PowerPAK® 1212-8SCD |
SISF02DN-T1-GE3 Guarantees
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• Guaranteed Quality
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