Vishay Siliconix SISH615ADN-T1-GE3
- SISH615ADN-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 20V 22.1A/35A PPAK
- Transistors - FETs, MOSFETs - Single
- SISH615ADN-T1-GE3 Datasheet
- PowerPAK® 1212-8SH
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 729
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SISH615ADN-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 20V 22.1A/35A PPAK |
Package Tape & Reel (TR) |
Series TrenchFET® Gen III |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® 1212-8SH |
Supplier Device Package PowerPAK® 1212-8SH |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.7W (Ta), 52W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 22.1A (Ta), 35A (Tc) |
Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 183 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 5590 pF @ 10 V |
Vgs (Max) ±12V |
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V |
Package_case PowerPAK® 1212-8SH |
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