Vishay Siliconix SISS10ADN-T1-GE3
- SISS10ADN-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 40V 31.7A/109A PPAK
- Transistors - FETs, MOSFETs - Single
- SISS10ADN-T1-GE3 Datasheet
- PowerPAK® 1212-8S
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 4032
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SISS10ADN-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 40V 31.7A/109A PPAK |
Package Cut Tape (CT) |
Series TrenchFET® Gen IV |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® 1212-8S |
Supplier Device Package PowerPAK® 1212-8S |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 4.8W (Ta), 56.8W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 40 V |
Current - Continuous Drain (Id) @ 25°C 31.7A (Ta), 109A (Tc) |
Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3030 pF @ 20 V |
Vgs (Max) +20V, -16V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case PowerPAK® 1212-8S |
SISS10ADN-T1-GE3 Guarantees
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