Vishay Siliconix SISS76LDN-T1-GE3
- SISS76LDN-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 70V 19.6A/67.4A PPAK
- Transistors - FETs, MOSFETs - Single
- SISS76LDN-T1-GE3 Datasheet
- PowerPAK® 1212-8SH
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 1806
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SISS76LDN-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 70V 19.6A/67.4A PPAK |
Package Cut Tape (CT) |
Series TrenchFET® Gen IV |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® 1212-8SH |
Supplier Device Package PowerPAK® 1212-8SH |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 4.8W (Ta), 57W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 70 V |
Current - Continuous Drain (Id) @ 25°C 19.6A (Ta), 67.4A (Tc) |
Rds On (Max) @ Id, Vgs 6.25mOhm @ 10A, 4.5V |
Vgs(th) (Max) @ Id 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 33.5 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 35 V |
Vgs (Max) ±12V |
Drive Voltage (Max Rds On, Min Rds On) 3.3V, 4.5V |
Package_case PowerPAK® 1212-8SH |
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