SIZ998BDT-T1-GE3

Vishay Siliconix SIZ998BDT-T1-GE3

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  • SIZ998BDT-T1-GE3
  • Vishay Siliconix
  • DUAL N-CHANNEL 30-V (D-S) MOSFET
  • Transistors - FETs, MOSFETs - Arrays
  • SIZ998BDT-T1-GE3 Datasheet
  • 8-PowerWDFN
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4641
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SIZ998BDT-T1-GE3
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Vishay Siliconix
Description
DUAL N-CHANNEL 30-V (D-S) MOSFET
Package
Cut Tape (CT)
Series
TrenchFET® Gen IV
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-PowerPair® (6x5)
Power - Max
3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
FET Type
2 N-Channel (Dual), Schottky
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Rds On (Max) @ Id, Vgs
4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V, 46.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
790pF @ 15V, 2130pF @ 15V
Package_case
8-PowerWDFN

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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