Vishay Siliconix SIZ998BDT-T1-GE3
- SIZ998BDT-T1-GE3
- Vishay Siliconix
- DUAL N-CHANNEL 30-V (D-S) MOSFET
- Transistors - FETs, MOSFETs - Arrays
- SIZ998BDT-T1-GE3 Datasheet
- 8-PowerWDFN
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 4641
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SIZ998BDT-T1-GE3 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Vishay Siliconix |
Description DUAL N-CHANNEL 30-V (D-S) MOSFET |
Package Cut Tape (CT) |
Series TrenchFET® Gen IV |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerWDFN |
Supplier Device Package 8-PowerPair® (6x5) |
Power - Max 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) |
FET Type 2 N-Channel (Dual), Schottky |
FET Feature Standard |
Drain to Source Voltage (Vdss) 30V |
Current - Continuous Drain (Id) @ 25°C 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) |
Rds On (Max) @ Id, Vgs 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V, 46.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 15V, 2130pF @ 15V |
Package_case 8-PowerWDFN |
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Vishay Siliconix
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