SPB12N50C3ATMA1

Infineon Technologies SPB12N50C3ATMA1

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  • SPB12N50C3ATMA1
  • Infineon Technologies
  • MOSFET N-CH 560V 11.6A TO263-3
  • Transistors - FETs, MOSFETs - Single
  • SPB12N50C3ATMA1 Datasheet
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 11718
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SPB12N50C3ATMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 560V 11.6A TO263-3
Package
Cut Tape (CT)
Series
CoolMOS™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3-2
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
125W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
560 V
Current - Continuous Drain (Id) @ 25°C
11.6A (Tc)
Rds On (Max) @ Id, Vgs
380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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