Infineon Technologies SPB80N06S2L-07
- SPB80N06S2L-07
- Infineon Technologies
- MOSFET N-CH 55V 80A TO263-3
- Transistors - FETs, MOSFETs - Single
- SPB80N06S2L-07 Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 3275
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SPB80N06S2L-07 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 55V 80A TO263-3 |
Package Tape & Reel (TR) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package PG-TO263-3-2 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 210W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 55 V |
Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
Rds On (Max) @ Id, Vgs 7mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id 2V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4210 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
SPB80N06S2L-07 Guarantees
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