Infineon Technologies SPB80P06P G
- SPB80P06P G
- Infineon Technologies
- MOSFET P-CH 60V 80A TO-263
- Transistors - FETs, MOSFETs - Single
- SPB80P06P G Datasheet
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead free / RoHS Compliant
- 1966
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SPB80P06P G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET P-CH 60V 80A TO-263 |
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Series SIPMOS? |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package PG-TO263-3-2 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 340W (Tc) |
FET Type P-Channel |
Drain to Source Voltage (Vdss) 60V |
Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
Rds On (Max) @ Id, Vgs 23 mOhm @ 64A, 10V |
Vgs(th) (Max) @ Id 4V @ 5.5mA |
Gate Charge (Qg) (Max) @ Vgs 173nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 5033pF @ 25V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) 20V |
Package_case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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