SQM120N10-3M8_GE3

Vishay Siliconix SQM120N10-3M8_GE3

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  • SQM120N10-3M8_GE3
  • Vishay Siliconix
  • MOSFET N-CH 100V 120A TO263
  • Transistors - FETs, MOSFETs - Single
  • SQM120N10-3M8_GE3 Datasheet
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 726
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SQM120N10-3M8_GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 100V 120A TO263
Package
Cut Tape (CT)
Series
Automotive, AEC-Q101, TrenchFET®
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263 (D²Pak)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
375W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7230 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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