Vishay Siliconix SQS660CENW-T1_GE3
- SQS660CENW-T1_GE3
- Vishay Siliconix
- AUTOMOTIVE N-CHANNEL 60 V (D-S)
- Transistors - FETs, MOSFETs - Single
- SQS660CENW-T1_GE3 Datasheet
- PowerPAK® 1212-8W
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 13238
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SQS660CENW-T1_GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description AUTOMOTIVE N-CHANNEL 60 V (D-S) |
Package Tape & Reel (TR) |
Series Automotive, AEC-Q101, TrenchFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® 1212-8W |
Supplier Device Package PowerPAK® 1212-8W |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 62.5W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 18A (Tc) |
Rds On (Max) @ Id, Vgs 11.2mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case PowerPAK® 1212-8W |
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Customer reviews
Vishay Siliconix
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