Vishay Siliconix SQS966ENW-T1_GE3
- SQS966ENW-T1_GE3
- Vishay Siliconix
- MOSFET N-CHAN 60V
- Transistors - FETs, MOSFETs - Arrays
- SQS966ENW-T1_GE3 Datasheet
- PowerPAK® 1212-8W Dual
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 2247
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SQS966ENW-T1_GE3 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Vishay Siliconix |
Description MOSFET N-CHAN 60V |
Package Tape & Reel (TR) |
Series Automotive, AEC-Q101, TrenchFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount, Wettable Flank |
Package / Case PowerPAK® 1212-8W Dual |
Supplier Device Package PowerPAK® 1212-8W Dual |
Power - Max 27.8W (Tc) |
FET Type 2 N-Channel (Dual) |
FET Feature Standard |
Drain to Source Voltage (Vdss) 60V |
Current - Continuous Drain (Id) @ 25°C 6A (Tc) |
Rds On (Max) @ Id, Vgs 36mOhm @ 1.25A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 572pF @ 25V |
Package_case PowerPAK® 1212-8W Dual |
SQS966ENW-T1_GE3 Guarantees
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