Vishay Siliconix SQV120N10-3M8_GE3
- SQV120N10-3M8_GE3
- Vishay Siliconix
- MOSFET N-CH 100V 120A TO262-3
- Transistors - FETs, MOSFETs - Single
- SQV120N10-3M8_GE3 Datasheet
- 28-SOIC (0.295\", 7.50mm Width)
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 27862
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SQV120N10-3M8_GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 100V 120A TO262-3 |
Package Cut Tape (CT) |
Series Automotive, AEC-Q101, TrenchFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case 28-SOIC (0.295\", 7.50mm Width) |
Supplier Device Package 28-SOIC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 250W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 120A (Tc) |
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 7230 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case 28-SOIC (0.295\", 7.50mm Width) |
SQV120N10-3M8_GE3 Guarantees
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