Toshiba Semiconductor and Storage SSM3J168F,LXHF
- SSM3J168F,LXHF
- Toshiba Semiconductor and Storage
- SMOS LOW RON VDS:-60V VGSS:+10/-
- Transistors - FETs, MOSFETs - Single
- SSM3J168F,LXHF Datasheet
- TO-236-3, SC-59, SOT-23-3
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 20304
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SSM3J168F,LXHF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description SMOS LOW RON VDS:-60V VGSS:+10/- |
Package Tape & Reel (TR) |
Series Automotive, AEC-Q101, U-MOSVI |
Operating Temperature 150°C |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package S-Mini |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 600mW (Ta) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 400mA (Ta) |
Rds On (Max) @ Id, Vgs 1.55Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 3 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 82 pF @ 10 V |
Vgs (Max) +10V, -20V |
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V |
Package_case TO-236-3, SC-59, SOT-23-3 |
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