SSM6G18NU,LF

Toshiba Semiconductor and Storage SSM6G18NU,LF

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  • SSM6G18NU,LF
  • Toshiba Semiconductor and Storage
  • MOSFET P-CH 20V 2A 6UDFN
  • Transistors - FETs, MOSFETs - Single
  • SSM6G18NU,LF Datasheet
  • 6-WDFN Exposed Pad
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 25532
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SSM6G18NU,LF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET P-CH 20V 2A 6UDFN
Package
Tape & Reel (TR)
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
Supplier Device Package
6-µDFN (2x2)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1W (Ta)
FET Type
P-Channel
FET Feature
Schottky Diode (Isolated)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Rds On (Max) @ Id, Vgs
112mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 10 V
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Package_case
6-WDFN Exposed Pad

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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