Toshiba Semiconductor and Storage SSM6J213FE(TE85L,F
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- SSM6J213FE(TE85L,F
- Toshiba Semiconductor and Storage
- MOSFET P CH 20V 2.6A ES6
- Transistors - FETs, MOSFETs - Single
- SSM6J213FE(TE85L,F Datasheet
- SOT-563, SOT-666
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 3979
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number SSM6J213FE(TE85L,F |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET P CH 20V 2.6A ES6 |
| Package Tape & Reel (TR) |
| Series U-MOSVI |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case SOT-563, SOT-666 |
| Supplier Device Package ES6 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 500mW (Ta) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 20 V |
| Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs 103mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 10 V |
| Vgs (Max) ±8V |
| Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V |
| Package_case SOT-563, SOT-666 |
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