STMicroelectronics STGWA75H65DFB2
- STGWA75H65DFB2
- STMicroelectronics
- TRENCH GATE FIELD-STOP, 650 V, 7
- Transistors - IGBTs - Single
- STGWA75H65DFB2 Datasheet
- TO-247-3
- Tube
-
Lead free / RoHS Compliant
- 4927
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number STGWA75H65DFB2 |
Category Transistors - IGBTs - Single |
Manufacturer STMicroelectronics |
Description TRENCH GATE FIELD-STOP, 650 V, 7 |
Package Tube |
Series HB2 |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247 Long Leads |
Power - Max 357 W |
Input Type Standard |
Reverse Recovery Time (trr) 88 ns |
Current - Collector (Ic) (Max) 115 A |
Voltage - Collector Emitter Breakdown (Max) 650 V |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A |
Gate Charge 207 nC |
Td (on/off) @ 25°C 28ns/100ns |
Test Condition 400V, 75A, 2.2Ohm, 15V |
Current - Collector Pulsed (Icm) 225 A |
Switching Energy 1.428mJ (on), 1.05mJ (off) |
Package_case TO-247-3 |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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