Toshiba Semiconductor and Storage TJ200F04M3L,LXHQ
- TJ200F04M3L,LXHQ
- Toshiba Semiconductor and Storage
- MOSFET P-CH 40V 200A TO220SM
- Transistors - FETs, MOSFETs - Single
- TJ200F04M3L,LXHQ Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
- Lead free / RoHS Compliant
- 20714
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TJ200F04M3L,LXHQ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET P-CH 40V 200A TO220SM |
Package Tube |
Series U-MOSVI |
Operating Temperature 175°C |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package TO-220SM(W) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 375W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 40 V |
Current - Continuous Drain (Id) @ 25°C 200A (Ta) |
Rds On (Max) @ Id, Vgs 1.8mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 460 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1280 pF @ 10 V |
Vgs (Max) +10V, -20V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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