TJ60S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage TJ60S06M3L(T6L1,NQ

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  • TJ60S06M3L(T6L1,NQ
  • Toshiba Semiconductor and Storage
  • MOSFET P-CH 60V 60A DPAK
  • Transistors - FETs, MOSFETs - Single
  • TJ60S06M3L(T6L1,NQ Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2301
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TJ60S06M3L(T6L1,NQ
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET P-CH 60V 60A DPAK
Package
Tube
Series
U-MOSVI
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK+
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
100W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
60A (Ta)
Rds On (Max) @ Id, Vgs
11.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7760 pF @ 10 V
Vgs (Max)
+10V, -20V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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