Toshiba Semiconductor and Storage TK12J60W,S1VE(S
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- TK12J60W,S1VE(S
- Toshiba Semiconductor and Storage
- MOSFET N-CH 600V 11.5A TO3P
- Transistors - FETs, MOSFETs - Single
- TK12J60W,S1VE(S Datasheet
- TO-3P-3, SC-65-3
- Tray
-
Lead free / RoHS Compliant - 7391
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number TK12J60W,S1VE(S |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 600V 11.5A TO3P |
| Package Tray |
| Series - |
| Operating Temperature 150°C |
| Mounting Type Through Hole |
| Package / Case TO-3P-3, SC-65-3 |
| Supplier Device Package TO-3P(N) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 110W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 11.5A (Ta) |
| Rds On (Max) @ Id, Vgs 300mOhm @ 5.8A, 10V |
| Vgs(th) (Max) @ Id 3.7V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 300 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-3P-3, SC-65-3 |
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