Toshiba Semiconductor and Storage TK17N65W,S1F
- TK17N65W,S1F
- Toshiba Semiconductor and Storage
- MOSFET N-CH 650V 17.3A TO247
- Transistors - FETs, MOSFETs - Single
- TK17N65W,S1F Datasheet
- TO-247-3
- Tube
-
Lead free / RoHS Compliant
- 2368
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TK17N65W,S1F |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 650V 17.3A TO247 |
Package Tube |
Series DTMOSIV |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 165W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 17.3A (Ta) |
Rds On (Max) @ Id, Vgs 200mOhm @ 8.7A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
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