Toshiba Semiconductor and Storage TK200F04N1L,LXGQ
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- TK200F04N1L,LXGQ
- Toshiba Semiconductor and Storage
- MOSFET N-CH 40V 200A TO220SM
- Transistors - FETs, MOSFETs - Single
- TK200F04N1L,LXGQ Datasheet
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 2309
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
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| Part Number TK200F04N1L,LXGQ |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 40V 200A TO220SM |
| Package Cut Tape (CT) |
| Series U-MOSVIII-H |
| Operating Temperature 175°C |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package TO-220SM(W) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 375W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 200A (Ta) |
| Rds On (Max) @ Id, Vgs 0.9mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 214 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 14920 pF @ 10 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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