Toshiba Semiconductor and Storage TK2R4E08QM,S1X
- TK2R4E08QM,S1X
- Toshiba Semiconductor and Storage
- UMOS10 TO-220AB 80V 2.4MOHM
- Transistors - FETs, MOSFETs - Single
- TK2R4E08QM,S1X Datasheet
- TO-220-3
- Tube
-
Lead free / RoHS Compliant
- 2939
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TK2R4E08QM,S1X |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description UMOS10 TO-220AB 80V 2.4MOHM |
Package Tube |
Series U-MOSX-H |
Operating Temperature 175°C |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 300W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 80 V |
Current - Continuous Drain (Id) @ 25°C 120A (Tc) |
Rds On (Max) @ Id, Vgs 2.44mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 2.2mA |
Gate Charge (Qg) (Max) @ Vgs 178 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 40 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Package_case TO-220-3 |
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