Toshiba Semiconductor and Storage TK33S10N1L,LQ
- TK33S10N1L,LQ
- Toshiba Semiconductor and Storage
- MOSFET N-CH 100V 33A DPAK
- Transistors - FETs, MOSFETs - Single
- TK33S10N1L,LQ Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tube
-
Lead free / RoHS Compliant
- 3527
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TK33S10N1L,LQ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 100V 33A DPAK |
Package Tube |
Series U-MOSVIII-H |
Operating Temperature 175°C |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package DPAK+ |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 125W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 33A (Ta) |
Rds On (Max) @ Id, Vgs 9.7mOhm @ 16.5A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 10 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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