Toshiba Semiconductor and Storage TK6P60W,RVQ
- TK6P60W,RVQ
- Toshiba Semiconductor and Storage
- MOSFET N CH 600V 6.2A DPAK
- Transistors - FETs, MOSFETs - Single
- TK6P60W,RVQ Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 7139
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TK6P60W,RVQ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N CH 600V 6.2A DPAK |
Package Cut Tape (CT) |
Series DTMOSIV |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package DPAK |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 60W (Tc) |
FET Type N-Channel |
FET Feature Super Junction |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta) |
Rds On (Max) @ Id, Vgs 820mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id 3.7V @ 310µA |
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 300 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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