TPC6006-H(TE85L,F)

Toshiba Semiconductor and Storage TPC6006-H(TE85L,F)

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  • TPC6006-H(TE85L,F)
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 40V 3.9A VS-6
  • Transistors - FETs, MOSFETs - Single
  • TPC6006-H(TE85L,F) Datasheet
  • SOT-23-6 Thin, TSOT-23-6
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 19956
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TPC6006-H(TE85L,F)
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 40V 3.9A VS-6
Package
Tube
Series
U-MOSIII-H
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
VS-6 (2.9x2.8)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
700mW (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Ta)
Rds On (Max) @ Id, Vgs
75mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
251 pF @ 10 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
SOT-23-6 Thin, TSOT-23-6

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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