Toshiba Semiconductor and Storage TPC8018-H(TE12LQM)
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- TPC8018-H(TE12LQM)
- Toshiba Semiconductor and Storage
- MOSFET N-CH 30V 18A 8SOP
- Transistors - FETs, MOSFETs - Single
- TPC8018-H(TE12LQM) Datasheet
- 8-SOIC (0.173\", 4.40mm Width)
- Tube
-
Lead free / RoHS Compliant - 27538
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
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| Part Number TPC8018-H(TE12LQM) |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 30V 18A 8SOP |
| Package Tube |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-SOIC (0.173\", 4.40mm Width) |
| Supplier Device Package 8-SOP (5.5x6.0) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1W (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 18A (Ta) |
| Rds On (Max) @ Id, Vgs 4.6mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id 2.3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2265 pF @ 10 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 8-SOIC (0.173\", 4.40mm Width) |
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