Toshiba Semiconductor and Storage TPCC8002-H(TE12L,Q
- TPCC8002-H(TE12L,Q
- Toshiba Semiconductor and Storage
- MOSFET N-CH 30V 22A 8TSON
- Transistors - FETs, MOSFETs - Single
- TPCC8002-H(TE12L,Q Datasheet
- 8-VDFN Exposed Pad
- Tube
-
Lead free / RoHS Compliant
- 14973
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TPCC8002-H(TE12L,Q |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 30V 22A 8TSON |
Package Tube |
Series U-MOSV-H |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-VDFN Exposed Pad |
Supplier Device Package 8-TSON Advance (3.3x3.3) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 700mW (Ta), 30W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 22A (Ta) |
Rds On (Max) @ Id, Vgs 8.3mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 10 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-VDFN Exposed Pad |
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