TPCC8002-H(TE12L,Q

Toshiba Semiconductor and Storage TPCC8002-H(TE12L,Q

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  • TPCC8002-H(TE12L,Q
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 30V 22A 8TSON
  • Transistors - FETs, MOSFETs - Single
  • TPCC8002-H(TE12L,Q Datasheet
  • 8-VDFN Exposed Pad
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 14973
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TPCC8002-H(TE12L,Q
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 30V 22A 8TSON
Package
Tube
Series
U-MOSV-H
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Supplier Device Package
8-TSON Advance (3.3x3.3)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
700mW (Ta), 30W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
22A (Ta)
Rds On (Max) @ Id, Vgs
8.3mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 10 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-VDFN Exposed Pad

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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