Toshiba Semiconductor and Storage TPH1110ENH,L1Q
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- TPH1110ENH,L1Q
- Toshiba Semiconductor and Storage
- MOSFET N-CH 200V 7.2A 8SOP
- Transistors - FETs, MOSFETs - Single
- TPH1110ENH,L1Q Datasheet
- 8-PowerVDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 20829
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number TPH1110ENH,L1Q |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 200V 7.2A 8SOP |
| Package Tape & Reel (TR) |
| Series U-MOSVIII-H |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerVDFN |
| Supplier Device Package 8-SOP Advance (5x5) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1.6W (Ta), 42W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 7.2A (Ta) |
| Rds On (Max) @ Id, Vgs 114mOhm @ 3.6A, 10V |
| Vgs(th) (Max) @ Id 4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 100 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case 8-PowerVDFN |
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