Toshiba Semiconductor and Storage TPH1110ENH,L1Q
- TPH1110ENH,L1Q
- Toshiba Semiconductor and Storage
- MOSFET N-CH 200V 7.2A 8SOP
- Transistors - FETs, MOSFETs - Single
- TPH1110ENH,L1Q Datasheet
- 8-PowerVDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 20829
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TPH1110ENH,L1Q |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 200V 7.2A 8SOP |
Package Tape & Reel (TR) |
Series U-MOSVIII-H |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerVDFN |
Supplier Device Package 8-SOP Advance (5x5) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.6W (Ta), 42W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta) |
Rds On (Max) @ Id, Vgs 114mOhm @ 3.6A, 10V |
Vgs(th) (Max) @ Id 4V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 100 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case 8-PowerVDFN |
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