Toshiba Semiconductor and Storage TPN2R805PL,L1Q
- TPN2R805PL,L1Q
- Toshiba Semiconductor and Storage
- MOSFET N-CH 45V 139A/80A 8TSON
- Transistors - FETs, MOSFETs - Single
- TPN2R805PL,L1Q Datasheet
- 8-PowerVDFN
- Bulk
-
Lead free / RoHS Compliant
- 2131
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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Part Number TPN2R805PL,L1Q |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 45V 139A/80A 8TSON |
Package Bulk |
Series U-MOSIX-H |
Operating Temperature 175°C |
Mounting Type Surface Mount |
Package / Case 8-PowerVDFN |
Supplier Device Package 8-TSON Advance (3.1x3.1) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.67W (Ta), 104W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 45 V |
Current - Continuous Drain (Id) @ 25°C 139A (Ta), 80A (Tc) |
Rds On (Max) @ Id, Vgs 2.8mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id 2.4V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 22.5 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerVDFN |
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