TPW1R104PB,L1XHQ

Toshiba Semiconductor and Storage TPW1R104PB,L1XHQ

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  • TPW1R104PB,L1XHQ
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 40V 120A 8DSOP
  • Transistors - FETs, MOSFETs - Single
  • TPW1R104PB,L1XHQ Datasheet
  • 8-PowerVDFN
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4449
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TPW1R104PB,L1XHQ
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 40V 120A 8DSOP
Package
Tape & Reel (TR)
Series
U-MOSIX-H
Operating Temperature
175°C
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-DSOP Advance
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
960mW (Ta), 132W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
120A (Ta)
Rds On (Max) @ Id, Vgs
1.14mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4560 pF @ 10 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Package_case
8-PowerVDFN

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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