Toshiba Semiconductor and Storage TPW1R104PB,L1XHQ
- TPW1R104PB,L1XHQ
- Toshiba Semiconductor and Storage
- MOSFET N-CH 40V 120A 8DSOP
- Transistors - FETs, MOSFETs - Single
- TPW1R104PB,L1XHQ Datasheet
- 8-PowerVDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant
- 4449
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TPW1R104PB,L1XHQ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 40V 120A 8DSOP |
Package Tape & Reel (TR) |
Series U-MOSIX-H |
Operating Temperature 175°C |
Mounting Type Surface Mount |
Package / Case 8-PowerVDFN |
Supplier Device Package 8-DSOP Advance |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 960mW (Ta), 132W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 40 V |
Current - Continuous Drain (Id) @ 25°C 120A (Ta) |
Rds On (Max) @ Id, Vgs 1.14mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id 3V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4560 pF @ 10 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Package_case 8-PowerVDFN |
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