TSM130NB06CR RLG

Taiwan Semiconductor Corporation TSM130NB06CR RLG

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  • TSM130NB06CR RLG
  • Taiwan Semiconductor Corporation
  • MOSFET N-CH 60V 10A/51A 8PDFN
  • Transistors - FETs, MOSFETs - Single
  • TSM130NB06CR RLG Datasheet
  • 8-PowerTDFN
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1268
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TSM130NB06CR RLG
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 60V 10A/51A 8PDFN
Package
Tape & Reel (TR)
Series
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-PDFN (5x6)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.1W (Ta), 83W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs
13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2380 pF @ 30 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
8-PowerTDFN

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