Taiwan Semiconductor Corporation TSM130NB06LCR RLG
- TSM130NB06LCR RLG
- Taiwan Semiconductor Corporation
- MOSFET N-CH 60V 10A/51A 8PDFN
- Transistors - FETs, MOSFETs - Single
- TSM130NB06LCR RLG Datasheet
- 8-PowerTDFN
- Bulk
- Lead free / RoHS Compliant
- 2178
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TSM130NB06LCR RLG |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Taiwan Semiconductor Corporation |
Description MOSFET N-CH 60V 10A/51A 8PDFN |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN |
Supplier Device Package 8-PDFN (5x6) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.1W (Ta), 83W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 51A (Tc) |
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2175 pF @ 30 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerTDFN |
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