TSM170N06PQ56 RLG

Taiwan Semiconductor Corporation TSM170N06PQ56 RLG

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  • TSM170N06PQ56 RLG
  • Taiwan Semiconductor Corporation
  • MOSFET N-CH 60V 44A 8PDFN
  • Transistors - FETs, MOSFETs - Single
  • TSM170N06PQ56 RLG Datasheet
  • 8-PowerTDFN
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2058
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TSM170N06PQ56 RLG
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 60V 44A 8PDFN
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-PDFN (5x6)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
73.5W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
44A (Tc)
Rds On (Max) @ Id, Vgs
17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1556 pF @ 30 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-PowerTDFN

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