TSM1N80CW RPG

Taiwan Semiconductor Corporation TSM1N80CW RPG

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  • TSM1N80CW RPG
  • Taiwan Semiconductor Corporation
  • MOSFET N-CH 800V 300MA SOT223
  • Transistors - FETs, MOSFETs - Single
  • TSM1N80CW RPG Datasheet
  • TO-261-4, TO-261AA
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 897
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TSM1N80CW RPG
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 800V 300MA SOT223
Package
Tape & Reel (TR)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
SOT-223
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.1W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)
Rds On (Max) @ Id, Vgs
21.6Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-261-4, TO-261AA

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