TSM250NB06DCR RLG

Taiwan Semiconductor Corporation TSM250NB06DCR RLG

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  • TSM250NB06DCR RLG
  • Taiwan Semiconductor Corporation
  • DUAL N-CHANNEL POWER MOSFET 60V,
  • Transistors - FETs, MOSFETs - Arrays
  • TSM250NB06DCR RLG Datasheet
  • 8-PowerTDFN
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1752
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TSM250NB06DCR RLG
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Taiwan Semiconductor Corporation
Description
DUAL N-CHANNEL POWER MOSFET 60V,
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-PDFN (5x6)
Power - Max
2W (Ta), 48W (Tc)
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs
25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1461pF @ 30V
Package_case
8-PowerTDFN

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