TSM3N90CI C0G

Taiwan Semiconductor Corporation TSM3N90CI C0G

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  • TSM3N90CI C0G
  • Taiwan Semiconductor Corporation
  • MOSFET N-CH 900V 2.5A ITO220AB
  • Transistors - FETs, MOSFETs - Single
  • TSM3N90CI C0G Datasheet
  • TO-220-3 Full Pack, Isolated Tab
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4815
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TSM3N90CI C0G
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 900V 2.5A ITO220AB
Package
Cut Tape (CT)
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Supplier Device Package
ITO-220AB
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
94W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Rds On (Max) @ Id, Vgs
5.1Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
748 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3 Full Pack, Isolated Tab

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