TSM4NB60CH C5G

Taiwan Semiconductor Corporation TSM4NB60CH C5G

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  • TSM4NB60CH C5G
  • Taiwan Semiconductor Corporation
  • MOSFET N-CH 600V 4A TO251
  • Transistors - FETs, MOSFETs - Single
  • TSM4NB60CH C5G Datasheet
  • TO-251-3 Short Leads, IPak, TO-251AA
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 13613
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TSM4NB60CH C5G
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 600V 4A TO251
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TO-251 (IPAK)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
50W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-251-3 Short Leads, IPak, TO-251AA

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