Taiwan Semiconductor Corporation TSM4ND65CI
- TSM4ND65CI
- Taiwan Semiconductor Corporation
- MOSFET N-CH 650V 4A ITO220
- Transistors - FETs, MOSFETs - Single
- TSM4ND65CI Datasheet
- TO-220-3 Full Pack, Isolated Tab
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 3069
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TSM4ND65CI |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Taiwan Semiconductor Corporation |
Description MOSFET N-CH 650V 4A ITO220 |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package ITO-220 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 41.6W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 4A (Tc) |
Rds On (Max) @ Id, Vgs 2.6Ohm @ 1.2A, 10V |
Vgs(th) (Max) @ Id 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 16.8 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 596 pF @ 50 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 Full Pack, Isolated Tab |
TSM4ND65CI Guarantees
• Prompt Responsiveness
• Guaranteed Quality
• Global Access
• Competitive Market Price
• One-Stop support services of supply chain
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