TSM4ND65CI

Taiwan Semiconductor Corporation TSM4ND65CI

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  • TSM4ND65CI
  • Taiwan Semiconductor Corporation
  • MOSFET N-CH 650V 4A ITO220
  • Transistors - FETs, MOSFETs - Single
  • TSM4ND65CI Datasheet
  • TO-220-3 Full Pack, Isolated Tab
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3069
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TSM4ND65CI
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 650V 4A ITO220
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Supplier Device Package
ITO-220
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
41.6W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Rds On (Max) @ Id, Vgs
2.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
596 pF @ 50 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3 Full Pack, Isolated Tab

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